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Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon
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Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane. © 2004 American Institute of Physics.
Author(s): Goss JP, Briddon PR, Ebertein TAG, Jones R, Pinho N, Blumenau AT, Oberg S
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2004
Volume: 85
Issue: 20
Pages: 4633-4635
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.1814425
DOI: 10.1063/1.1814425
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