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An ab initio study of intrinsic stacking faults in GaN

Lookup NU author(s): Professor Patrick Briddon

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Abstract

A first-principles study of intrinsic stacking faults in GaN is reported. Our calculations are based on density functional theory in local density approximation. We have found that the electron wave functions belonging to the conduction and valence band edge states tend to be localized almost exclusively on different sides of the faulted layer. We suggest that the electrostatic field caused by the macroscopically polarized 2H-GaN parts below and above a thin 3C-like layer around the stacking fault is responsible for these possibly shallow localized states.

Publication metadata

Author(s): Iwata HP, Oberg S, Briddon PR

Editor(s): Roland Madar, Jean Camassel and Elisabeth Blanquet

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM 2003)

Year of Conference: 2004

Pages: 1617-1620

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.1617

DOI: 10.4028/www.scientific.net/MSF.457-460.1617

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