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Edge termination of SiC Schottky diodes with guard rings formed by high energy boron implantation

Lookup NU author(s): Dr Alton Horsfall, Professor Nick Wright


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The effectiveness of Boron implanted guard ring (GR) edge termination for SiC Schottky diodes was investigated. Boron implants of energies up to 350 keV (total dose of 7.1·1014cm-2) and up to 200 keV (2.4·1014cm-2) were used to form a box doping profile in GR for the depth of 700 and 400 nm, respectively. The influence of doping level on GR performance was investigated through the use of post implantation annealing under different conditions to vary the Boron activation rate, and reactive ion etching (RIE) to reduce the total surface charge in GR. Fabricated 4H-SiC Schottky diodes revealed soft recoverable avalanche breakdown at voltage of about 1300 V which is 70% of ideal breakdown voltage value.

Publication metadata

Author(s): Wright NG; Horsfall AB; Vassilevski KV; Johnson CM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum

Year of Conference: 2004

Pages: 989-992

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.


DOI: 10.4028/

Notes: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003; Lyon; 5 October 2003 through 10 October 2003; Code 63893