ePrints

Quantum mechanical modelling of defects in semiconductors

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

The theoretical basis of density functional pseudopotential methods for determining the properties of defects in semiconductors is given. The formalism is applied to a single illustrative defect, the carbon interstitial in silicon, which has been identified by electron paramagnetic resonance, vibrational mode spectroscopy, photoluminescence and deep-level transient spectroscopy. The theory is shown to largely account for the properties of the defect.

Publication metadata

Author(s): Jones R, Coomer BJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Physics: Condensed Matter

Year: 2004

Volume: 16

Issue: 27

Pages: S2643-S2657

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd

URL: http://dx.doi.org/10.1088/0953-8984/16/27/004

DOI: 10.1088/0953-8984/16/27/004

Altmetrics

Share