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Lookup NU author(s): Professor Patrick Briddon
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The theoretical basis of density functional pseudopotential methods for determining the properties of defects in semiconductors is given. The formalism is applied to a single illustrative defect, the carbon interstitial in silicon, which has been identified by electron paramagnetic resonance, vibrational mode spectroscopy, photoluminescence and deep-level transient spectroscopy. The theory is shown to largely account for the properties of the defect.
Author(s): Jones R, Coomer BJ, Briddon PR
Publication type: Article
Publication status: Published
Journal: Journal of Physics: Condensed Matter
ISSN (print): 0953-8984
ISSN (electronic): 1361-648X
Publisher: Institute of Physics Publishing Ltd
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