Browse by author
Lookup NU author(s): Professor Jon Goss,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Nitrogen-vacancy defects in Si are of interest due to their ability to suppress the formation of large vacancy cluster during growth but there are problems in their characterisation. We use local density functional theory to determine the local vibrational modes, electrical levels and stability of a number of nitrogen defects. A prominent nitrogen local vibrational mode at 663 cm-1 is attributed to a nitrogen-vacancy centre and tentative assignments of the ABC photoluminescence line and the trigonal SL6 BPR centre are made.
Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Diffusion and Defect Data Pt.B: Solid State Phenomena
Print publication date: 01/01/2004
ISSN (print): 1012-0394
Publisher: Scitec Publications Ltd.