Toggle Main Menu Toggle Search

Open Access padlockePrints

Structure and Electronic Properties of Nitrogen Defects in Silicon

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Nitrogen-vacancy defects in Si are of interest due to their ability to suppress the formation of large vacancy cluster during growth but there are problems in their characterisation. We use local density functional theory to determine the local vibrational modes, electrical levels and stability of a number of nitrogen defects. A prominent nitrogen local vibrational mode at 663 cm-1 is attributed to a nitrogen-vacancy centre and tentative assignments of the ABC photoluminescence line and the trigonal SL6 BPR centre are made.

Publication metadata

Author(s): Jones R, Hahn I, Goss JP, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Diffusion and Defect Data Pt.B: Solid State Phenomena

Year: 2004

Volume: 95-96

Pages: 93-98

Print publication date: 01/01/2004

ISSN (print): 1012-0394

ISSN (electronic):

Publisher: Scitec Publications Ltd.