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Interstitial H2 in germanium by Raman scattering and ab initio calculations

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80K reveal two sharp lines at 3826 and 3834cm-1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice. © 2005 The American Physical Society.

Publication metadata

Author(s): Hiller M, Lavrov EV, Weber J, Hourahine B, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2005

Volume: 72

Issue: 15

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.72.153201

DOI: 10.1103/PhysRevB.72.153201

Notes: Article no. 153201 4 pages

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