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Vacancy-impurity complexes and limitations for implantation doping of diamond

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon, Dr Mark Rayson

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Abstract

Many candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We report the results of first-principles calculations regarding the geometry, electronic structure, and energetics of impurity-vacancy complexes in diamond and show that such complexes explain the generally low doping efficiency for implanted material. © 2005 The American Physical Society.

Publication metadata

Author(s): Goss JP, Briddon PR, Rayson MJ, Sque SJ, Jones R

Publication type: Article

Publication status: Published

Journal: Physical Review B - Condensed Matter and Materials Physics

Year: 2005

Volume: 72

Issue: 3

Pages: 1-11

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.72.035214

DOI: 10.1103/PhysRevB.72.035214

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