Browse by author
Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon,
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The extreme materials properties of diamond lend it to a range of semiconductor applications, but the difficulty in forming n-type diamond, and the unintentional inclusion of deleterious impurities has proved problematic. Co-doping diamond with boron and deuterium yields n-type conduction and recent theory suggests that BD2 and BD3 complexes have shallow donor levels. We show here that the proposed structures are unstable and structural relaxation result in deep levels or passive defects. We also comment on other proposed co-doping schemes: N-H-N, S-H and Si4-N. Finally we show that combination of theory and the polarized uptake of Ni in diamond contradict the current interstitial Ni models for the 1.404 eV center. © 2005 American Institute of Physics.
Author(s): Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors
Year of Conference: 2005
Library holdings: Search Newcastle University Library for this item
Series Title: AIP Conference Proceedings