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Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
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We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO*2. Important new experimental observations are the detection of mixed local vibrational modes of VO*2 in 16O,18O co-doped samples, the determination of the position of LVM bands for the negatively charged defect, and an assignment of an acceptor level at about Ec - 0.05 eV. Defect energetics, electrical levels and LVM frequencies of the VO*2 complex are also investigated by ab-initio density-functional modeling. We find it to be a bistable defect which accounts well for the experimental data. The metastable form produces an acceptor state at ∼0.05 eV below Ec, and can be thought of as a VO defect perturbed by interstitial oxygen.
Author(s): Murin LI, Lindstrom JL, Markevich VP, Medvedeva IF, Torres VJB, Coutinho J, Jones R, Briddon PR
Editor(s): Pichaud, B., Claverie, A.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Gettering and Defect Engineering in Semiconductor Technology XI: Gadest, Proceedings of the 11th International Autumn Meeting
Year of Conference: 2005
Publisher: Trans Tech Publications Ltd.
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