ePrints

Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions

Lookup NU author(s): Dr Jose Coutinho, Richard Jones, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Atomic hydrogen is a concomitant impurity in semiconductors. Its presence in Si, Ge and SiGe alloys has been established by means of paramagnetic resonance, optical, electrical and theoretical modeling studies. Hydrogen self-trapping is known to occur in Si and Ge, resulting in the formation of molecular hydrogen and H2* interstitial dimers. Here we report on the properties of H22* complexes in dilute SiGe alloys, by using an ab initio density functional method. It is found that these complexes form preferentially within Si-rich regions. H2* dimers in Si-rich alloys show vibrational properties similar to those in pure Si. On the other hand, in Ge-rich material the minority Si atoms act as nucleation sites, with the consequent formation of at least one preferential H2*- Si defect variant, showing a distinct vibrational activity. © 2005 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Coutinho J, Torres VJB, Pereira RN, Jones R, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies

Year of Conference: 2005

Pages: 363-367

ISSN: 0921-5107

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.mseb.2005.08.014

DOI: 10.1016/j.mseb.2005.08.014

Library holdings: Search Newcastle University Library for this item

ISBN: 18734944

Share