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Lookup NU author(s): Michael Wardle, Professor Jon Goss, Professor Patrick Briddon
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p -type doping of ZnO has thus-far proved difficult. Some reports indicate that Li substituting for Zn would be a shallow acceptor, with work on ferroelectric material showing that Li can be incorporated at the atomic percent concentrations. However, Li doping typically increases the resistivity of otherwise n -type material. We report on the structure and properties of Li in ZnO as predicted by first principles calculations. We also study the diffusion of interstitial Li and show that doping may be limited by the formation of Li2 O inclusions and the formation of strongly bound passive Lii H complexes. © 2005 The American Physical Society.
Author(s): Wardle MG, Goss JP, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
Year: 2005
Volume: 71
Issue: 15
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
URL: http://dx.doi.org/10.1103/PhysRevB.71.155205
DOI: 10.1103/PhysRevB.71.155205
Notes: Article no. 155205 10 pages
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