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Lookup NU author(s): Professor Jon Goss,
Dr Michael Shaw,
Professor Patrick Briddon
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The introduction of defect-related states in the bandgap of semiconductors can be both advantageous and deleterious to conduction, and it is therefore of great importance to have quantitative computational methods for determining the location of electrical levels. In particular, where the defect levels are deep in the bandgap, the states involved are typically highly localized and the application of real-space, localized basis sets have clear advantages. In this chapter the use of such basis sets both for cluster and supercell geometries is discussed. Agreement with experiment is often hampered by problems such as the underestimate of bandgaps when using density-functional theory. We show that these can be somewhat mitigated by the use of "markers", either experimental or theoretical, to largely eliminate such systematic errors. © Springer-Verlag Berlin/Heidelberg 2006.
Author(s): Goss JP, Shaw MJ, Briddon PR
Publication type: Article
Publication status: Published
Journal: Topics in Applied Physics
ISSN (print): 0303-4216
ISSN (electronic): 1437-0859
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