Toggle Main Menu Toggle Search

Open Access padlockePrints

Theory of Mn-H co-doping for GaAs and related magnetic semiconductors

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon, Michael Wardle


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


GaAs has recently received attention due to the potential use of Mn-doped material in spintronics applications. MnGa both magnetically and electrically dopes the material, and, in order to increase the control over the materials properties, selective passivation by hydrogen has been suggested. However, some debate exists over the location of H in MnGa-H complexes. We have examined the energetics, structure and vibrational modes of MnGa-H complexes in GaAs. In addition, we have examined the properties of Mn-H complexes in InP, where the vibrational modes have been detected, and GaN, which is also of interest for spintronics applications and exhibits enhanced magnetisation subsequent to hydrogenation. For GaAs and InP, H lies at the bond-centre, whereas in GaN H anti-bonds to N. In all cases Mn is electrically passivated by H, but retains the high spin ground state required for magnetic material. © 2005 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Goss JP, Briddon PR, Wardle MG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 23rd International Conference on Defects in Semiconductors

Year of Conference: 2006

Pages: 654-657

ISSN: 0921-4526

Publisher: Physica B: Condensed Matter, Elsevier


DOI: 10.1016/j.physb.2005.12.165

Library holdings: Search Newcastle University Library for this item

ISBN: 18732135