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Photoelastic constants in diamond and silicon

Lookup NU author(s): Dr Michael Shaw, Professor Patrick Briddon


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Ab Initio calculations, using density functional theory within the AIMPRO code, have been performed on bulk diamond and silicon in order to calculate the change in the dielectric constant due to strain, and hence the values of the photoelastic tensors. A combination of compressive and tensile strain has been applied to two atom unit cells of Si and diamond and the tensors relating to p11 + 2p12, p12 - 2p11 and p 44 extracted. Good agreement is found with experimental results for absolute values and frequency dependence of the constants for silicon. Results are also given for diamond where experimental data is much more limited and scattered. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Publication metadata

Author(s): Hounsome LS, Jones R, Shaw MJ, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Physica Status Solidi (A) Applications and Materials: 11th International Workshop on Surface and Bulk Defects in CVD Diamond Films

Year of Conference: 2006

Pages: 3088-3093

ISSN: 0031-8965

Publisher: Wiley - V C H Verlag GmbH & Co. KGaA


DOI: 10.1002/pssa.200671121

Library holdings: Search Newcastle University Library for this item

ISBN: 18626319