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Lookup NU author(s): Professor Patrick Briddon
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SiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC. In this work we present results on the effect of charge on the dislocation kinks. The calculations show that silicon kinks have a deep filled band above the valence band and the trapping of holes into this band permits motion at room temperature. © 2006 American Institute of Physics.
Author(s): Eberlein TAG, Jones R, Blumenau AT, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
Notes: Article no. 082113
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