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Lookup NU author(s): Michael Wardle,
Dr Jon Goss,
Professor Patrick Briddon
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The structural and electrical properties of Fe, Co, Ni and Cu in ZnO, and their complexes with hydrogen have been studied using local-density-functional methods. Out of the many defect structures examined several centres are of particular relevance to the issue of n-type conductivity in as-grown material. CuZn-H2 is bound by 0.9 eV and exhibits a shallow donor level. FeZn, Coi and Fei also exhibit donor levels which may be shallow. Such centres are much more thermally stable than isolated hydrogen which is thought to be mobile at low temperatures. Combinations of transitional metal and hydrogen might explain at least part of the n-type conductivity seen at room temperature in as-grown ZnO. © 2006 Elsevier B.V. All rights reserved.
Author(s): Wardle MG, Goss JP, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 23rd International Conference on Defects in Semiconductors
Year of Conference: 2006
Publisher: Physica B: Condensed Matter, Elsevier BV
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