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Local vibrations of substitutional carbon in SiGe alloys

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon


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The influence of Ge content on the local vibrational mode of substitutional carbon in Sirich Si1-xGex single crystals has been investigated by infrared Fourier-transform spectroscopy and ab initio modeling methods. Czochralski-grown Si1-xGex samples doped with boron and carbon have been studied. The Ge fractional content was varied from x=0.004 to x=0.044. To reveal the Cs-related absorption band in the Si1-xGex the difference spectra between carbon-lean and carbon-reach Si1-xGex samples with the same Ge content were studied. We have found that the Cs-related absorption band in the Si1-xGex alloys red-shifts and broadens with increasing Ge content. It has been found that at x>0.015 the Cs absorption band consists of two overlapping lines corresponding to different combinations of Si and Ge atoms neighboring the Cs atom. The calculations show that substitutional carbon atoms avoid Ge ligand atoms, and should be found in Si-rich regions. These results also reveal that the softening of the Cs mode frequency arises from the SiGe volumic expansion.

Publication metadata

Author(s): Khirunenko L, Pomozov Yu, Sosnin M, Torres VJB, Coutinho J, Jones R, Abrosimov NV, Riemann H, Briddon PR

Editor(s): Vilarinho, PM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Advanced Materials Forum III: 3rd International Materials Symposium

Year of Conference: 2006

Pages: 364-368

ISSN: 0255-5476

Publisher: Trans Tech Publications

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9780878494026