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Lookup NU author(s): Professor Patrick Briddon
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We present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap does not differ radically in both materials. We propose a V2 model that is responsible for a donor level at Ev +0.03 eV, a first acceptor state at Ev +0.3 eV, and a second acceptor level at Ec -0.4 eV. The latter is only 0.1 eV deeper than an electron trap that has been recently linked to a divacancy in proton implanted material. © 2006 American Institute of Physics.
Author(s): Coutinho J, Torres VJB, Jones R, Carvalho A, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2006
Volume: 88
Issue: 9
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.2181202
DOI: 10.1063/1.2181202
Notes: Article no. 091919 3 pages
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