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Lookup NU author(s): Professor Patrick Briddon
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Donor and acceptor levels of atomic hydrogen centers in germanium are calculated by density functional-pseudopotential modeling, using large hydrogen-terminated Ge clusters. We found that the neutral bond centered (BC) and anti-bonding configurations (AB) are energetically very close, with a slight (0.1 eV) preference for the BC structure, which agrees with recent muonium spin resonance (μSR) data and previous supercell ab-initio calculations. The interstitial H defect shows a negative-U level ordering, possessing donor and acceptor levels at 0.28 eV below the conduction band and at about 0.1-0.2 eV above the valence band, respectively. The calculated donor level accounts well for deep level transient spectroscopy (DLTS) and μSR data, which give a (0/+) transition at 0.11 and 0.23 eV below Ec, respectively. The acceptor transition involves a structural change between AB and BC forms. Considering the 0.1 eV difference between these configurations, the AB0→AB-+h+ vertical transition is placed below Ev+0.1 eV, which may explain the failure of DLTS in detecting such a shallow level. © 2006 Elsevier Ltd. All rights reserved.
Author(s): Almeida LM, Coutinho J, Torres VJB, Jones R, Briddon PR
Editor(s): C. Claeys, T. Peaker, B. Svensson and J. Vanhellemont
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: E-MRS 2006 Spring Meeting
Year of Conference: 2006
Pages: 503-506
Publisher: Materials Science in Semiconductor Processing: Elsevier
URL: http://dx.doi.org/10.1016/j.mssp.2006.08.061
DOI: 10.1016/j.mssp.2006.08.061
Notes: Symposium T: Germanium based semiconductors from materials to devices
