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Lookup NU author(s): Professor Patrick Briddon
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Deep level transient spectroscopy (DLTS) together with first-principles calculations are used to investigate the centers that are formed upon annealing of the dominant VO center in Ge. It is suggested that as opposed to Si, the VO2 complex in Ge is bistable and a double acceptor, with first and second acceptor levels 0.365 and 0.195 eV below the conduction band, respectively. © 2007 Elsevier B.V. All rights reserved.
Author(s): Carvalho A, Torres VJB, Markevich VP, Coutinho J, Litvinov VV, Peaker AR, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physica B: Condensed Matter
ISSN (print): 0921-4526
ISSN (electronic): 1873-2135
Publisher: Elsevier BV
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