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Identification of stable and metastable forms of VO2 centers in germanium

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Deep level transient spectroscopy (DLTS) together with first-principles calculations are used to investigate the centers that are formed upon annealing of the dominant VO center in Ge. It is suggested that as opposed to Si, the VO2 complex in Ge is bistable and a double acceptor, with first and second acceptor levels 0.365 and 0.195 eV below the conduction band, respectively. © 2007 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Carvalho A, Torres VJB, Markevich VP, Coutinho J, Litvinov VV, Peaker AR, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2007

Volume: 401-402

Pages: 192-195

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2007.08.144

DOI: 10.1016/j.physb.2007.08.144

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