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Oxygen defects in irradiated germanium

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The defects present in oxygen-rich irradiated germanium have been extensively characterised from an experimental point of view. Here, we summarise recent theoretical findings obtained using the cluster method and discuss their relation with the experimental data. In order to find a microscopic interpretation of the reactions taking place in this material upon annealing up to 400°C, we performed nudged elastic band (NEB) calculations of the migration and dissociation paths of VO, as well as a modelling of other oxygen-related complexes that are expected to form in this temperature range. Energy barriers of 1.5 (1.1) eV and 1.2 (0.9) eV for the dissociation and migration of the neutral (negatively charged) VO defect are found. We compare these with the activation energies estimated from the analysis of Hall effect, deep level transient spectroscopy (DLTS) and infra-red (IR) spectroscopy annealing data reported in literature. © Springer Science+Business Media, LLC 2006.

Publication metadata

Author(s): Carvalho A, Jones R, Torres VJB, Coutinho J, Markevich V, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Materials Science: Materials in Electronics

Year: 2007

Volume: 18

Issue: 7

Pages: 781-786

Print publication date: 01/07/2007

ISSN (print): 0957-4522

ISSN (electronic): 1573-482X

Publisher: Springer

URL: http://dx.doi.org/10.1007/s10854-006-9083-6

DOI: 10.1007/s10854-006-9083-6

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