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Movement and pinning of dislocations in SiC

Lookup NU author(s): Professor Patrick Briddon


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SiC bipolar devices show a degradation under forward-biased operation due to the formation and rapid propagation of stacking faults in the active region of the device. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations having either Si or C core atoms. We investigated the effect of charge on the dislocation kinks and found that only silicon kinks have a deep filled band above the valence band. Trapping of holes into this band permits dislocation glide at room temperature. This mechanism is distinct from REDG as it requires only holes to be trapped at a Si partial and not in addition electrons in stacking fault states. We furthermore looked at the pinning of dislocations by nitrogen and boron and found a strong pinning of the C core by N and of the Si core by B. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

Publication metadata

Author(s): Eberlein TAG, Jones R, Blumenau AT, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Conference on Extended Defects in Semiconductors (EDS 2006)

Year of Conference: 2007

Pages: 2923-2928

ISSN: 1862-6351

Publisher: Physica Status Solidi C: Current Topics in Solid State Physics, Wiley-Blackwell


DOI: 10.1002/pssc.200775437

Library holdings: Search Newcastle University Library for this item

ISBN: 16101642