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Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

Lookup NU author(s): Dr Michele Pozzi, Dr Alun Harris, Emeritus Professor James Burdess, Dr Gordon Phelps, Professor Nick Wright


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Silicon carbide (SiC) is widely recognised as the leading candidate to replace silicon in Micro Electro-Mechanical Systems (MEMS) devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly SiC layer deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by Laser Doppler Velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330±45 GPa and 200±20MPa, respectively). The temperature coefficient of Young's modulus is found to be -53±2 ppm/K in the range RT to ∼300 °C, whilst an analytical expression is given for the temperature dependency of the Young's modulus between RT and 500 °C.

Publication metadata

Author(s): Pozzi M, Harris AJ, Burdess JS, Lee KK, Cheung R, Phelps GJ, Wright NG, Zorman CA, Mehregany M

Editor(s): Matthew Laudon; Bartlomiej F Romanowicz

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings

Year of Conference: 2007

Pages: 65-68

Publisher: Nano Science and Technology Institute

Library holdings: Search Newcastle University Library for this item

ISBN: 1420063421