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SiC sensors: A review

Lookup NU author(s): Professor Nick Wright, Dr Alton Horsfall


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Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications. © 2007 IOP Publishing Ltd.

Publication metadata

Author(s): Wright NG, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Journal of Physics D: Applied Physics

Year: 2007

Volume: 40

Issue: 20

Pages: 6345-6354

ISSN (print): 0022-3727

ISSN (electronic): 1361-6463

Publisher: Institute of Physics Publishing Ltd.


DOI: 10.1088/0022-3727/40/20/S17


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