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Lookup NU author(s): Professor Patrick Briddon
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Vacancies and interstitials in semiconductors play a fundamental role in both high-temperature diffusion and low-temperature radiation and implantation damage. In Ge, a serious contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity migration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density functional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium. © 2007 Elsevier B.V. All rights reserved.
Author(s): Coutinho J, Janke C, Carvalho A, Torres VJB, Oberg S, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physica B: Condensed Matter
ISSN (print): 0921-4526
ISSN (electronic): 1873-2135
Publisher: Elsevier BV, North-Holland
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