ePrints

Strong compensation of n-type Ge via formation of donor-vacancy complexes

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Vacancies and interstitials in semiconductors play a fundamental role in both high-temperature diffusion and low-temperature radiation and implantation damage. In Ge, a serious contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity migration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density functional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium. © 2007 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Coutinho J, Janke C, Carvalho A, Torres VJB, Oberg S, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2007

Volume: 401-402

Pages: 179-183

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier BV, North-Holland

URL: http://dx.doi.org/10.1016/j.physb.2007.08.141

DOI: 10.1016/j.physb.2007.08.141

Altmetrics

Share