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Shallow acceptors in GaN

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most likely possibility. The authors also show that the CN is passivated by H and the passivated complex is more stable than MgGa -H. © 2007 American Institute of Physics.

Publication metadata

Author(s): Eberlein TAG, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2007

Volume: 91

Issue: 13

Pages: -

Print publication date: 01/01/2007

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2776852

DOI: 10.1063/1.2776852

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