Toggle Main Menu Toggle Search

Open Access padlockePrints

Ab initio studies of arsenic and boron related defects in silicon mesa diodes

Lookup NU author(s): Professor Patrick Briddon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


E centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The AsV defect possesses electrical levels in agreement with experiments. The AsBV defect is found to exhibit a charge-dependent structure, has a barrier to dissociation of ∼ 1.4 eV, and possesses an acceptor level at 0.27 or 0.47 eV above the valence band top depending on the defect structure. The As2V defect possesses only an acceptor level at 0.22 eV below the conduction band. Comparison is made with recent experiments carried out on mesa diodes. © 2007 American Institute of Physics.

Publication metadata

Author(s): Janke C, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2007

Volume: 90

Issue: 15

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics


DOI: 10.1063/1.2721362


Altmetrics provided by Altmetric