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High temperature applications of 4H-SiC vertical junction field-effect transistors and Schottky Diodes

Lookup NU author(s): Dr Pallav Bhatnagar, Professor Nick Wright, Dr Alton Horsfall, Clare Johnson

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Abstract

Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20% reduction is consistent with the fall in transconductance of the device.

Publication metadata

Author(s): Bhatnagar P, Wright NG, Horsfall AB, Johnson CM, Uren MJ, Hilton KP, Munday AG, Hydes AJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)

Year of Conference: 2007

Pages: 987-990

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd

Library holdings: Search Newcastle University Library for this item

ISBN: 14226375

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