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Lookup NU author(s): Professor Patrick Briddon
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Vacancies and interstitials in semiconductors play a fundamental role in both high temperature diffusion and low temperature radiation and implantation damage. In Ge, a serious contender material for high-speed electronics applications, vacancies have historically been believed to dominate most diffusion related phenomena such as self-diffusivity or impurity migration. This is to be contrasted with silicon, where self-interstitials also play decisive roles, despite the similarities in the chemical nature of both materials. We report on density functional calculations of the formation and properties of vacancy-donor complexes in germanium. We predict that most vacancy-donor aggregates are deep acceptors, and together with their high solubilities, we conclude that they strongly contribute for inhibiting donor activation levels in germanium.
Author(s): Coutinho J, Janke C, Carvalho A, Oberg S, Torres VJB, Jones R, Briddon PR
Editor(s): Öchsner, A; Murch, GE
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Defect and Diffusion Forum: Diffusion in Solids and Liquids III
Year of Conference: 2008
Pages: 93-98
ISSN: 1012-0386
Publisher: Trans Tech Publications Ltd.
URL: http://www.ttp.net/3-908451-51-5.html
Series Editor(s): Fischer, DJ
