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Lookup NU author(s): Dr John Hedley, Dr Isabel Arce-Garcia, Dr Barry Gallacher
This paper reports on the use of Raman spectroseopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict device failure during excessive vibration. © 2008 IEEE.
Author(s): Hedley J, Hu Z, Arce-Garcia I, Gallacher BJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS
Year of Conference: 2008
Pages: 842-846
Date deposited: 28/03/2011
Publisher: IEEE
URL: http://dx.doi.org/10.1109/NEMS.2008.4484455
DOI: 10.1109/NEMS.2008.4484455
Library holdings: Search Newcastle University Library for this item
ISBN: 9781424419081
