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Mode shape and failure analysis of high frequency MEMS/NEMS using Raman spectroscopy

Lookup NU author(s): Dr John Hedley, Dr Isabel Arce-Garcia, Dr Barry Gallacher



This paper reports on the use of Raman spectroseopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict device failure during excessive vibration. © 2008 IEEE.

Publication metadata

Author(s): Hedley J, Hu Z, Arce-Garcia I, Gallacher BJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

Year of Conference: 2008

Pages: 842-846

Date deposited: 28/03/2011

Publisher: IEEE


DOI: 10.1109/NEMS.2008.4484455

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424419081