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Theoretical aspects on the formation of the tri-interstitial nitrogen defect in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

In this paper we investigate the formation of interstitial nitrogen trimers N3 which have been suggested as a fast-diffusing species in silicon recently. Out-diffusion profiles of nitrogen show the involvement of at least two independent nitrogen related defects in the diffusion process depending on the nitrogen concentration at different depths of the sample. When the nitrogen concentration is small it is proposed that nitrogen trimers are formed in a two step process. We present the structural properties of such a defect using density functional theory and examine the energetics of the two proposed reactions leading to the formation of N3.

Publication metadata

Author(s): Fujita N, Jones R, Eberlein TAG, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007

Year of Conference: 2008

Pages: 265-270

ISSN: 1012-0394

Publisher: Materials Science and Engineering

URL: http://dx.doi.org/10.4028/www.scientific.net/SSP.131-133

DOI: 10.4028/www.scientific.net/SSP.131-133

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