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The electronic properties of transition metal hydrogen complexes in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The electrical levels of various combinations of transition metal-H-n defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap t(2) manifold of states due to the impurity. Passive defects are identified.

Publication metadata

Author(s): Jones R, Resende A, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Symposium A on Defects in Silicon - Hydrogen at the 1998 Spring Meeting of the European-Materials-Research-Society

Year of Conference: 1999

Pages: 113-117

ISSN: 0921-5107

Publisher: Elsevier

URL: .10.1016/S0921-5107(98)00293-1

DOI: http://dx.doi.org/10.1016/S0921-5107(98)00293-1

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Sponsor(s): European Mat Res Soc

ISBN:

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