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Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

Lookup NU author(s): Dr Matthew Kitchin, Dr Michael Shaw, Dr Jerry Hagon, Professor Milan Jaros


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A large scale investigation into the effects of alloy layer disorder on emission in antimonide-based superlattices is reported. The potential utility of these systems in infrared (IR) optoelectronic technologies is reviewed and issues inhibiting their realization identified. The Ga0.7In0.3Sb alloy layer is modeled using both the conventional virtual crystal approximation and models which describe microscopic disorder, clustering, and atomistic relaxation. The structures have recently been fabricated for IR laser applications and we investigate the influence of the alloy description on the emission line shapes. For each superlattice we find that the emission linewidth and peak height is very sensitive to the microscopic details of the alloy potential. Comparing the various superlattice systems, which differ regarding the InAs layer widths, we find that their linewidth values (eV) are each of the same order of magnitude for a given population of excited carriers. While values show a strong dependence on the period, reflecting large differences in the interband transition probabilities, the relationship between linewidth and excited carrier population does not show a clear correlation with superlattice period. This article demonstrates quantitative links between microscopic disorder and the optical properties of strained-layer superlattices. (C) 2002 American Vacuum Society.

Publication metadata

Author(s): Shaw MJ; Jaros M; Hagon JP; Kitchin MR

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures

Year: 2002

Volume: 20

Issue: 1

Pages: 209-215

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics


DOI: 10.1116/1.1432967


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