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Lookup NU author(s): Professor Jon Goss,
Professor Patrick Briddon
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The volume change and piezospectroscopic tensors of defects in semiconductors provide a direct link between experiment and modern modeling techniques. We present predictions of these quantities for the single, di-, tri-, and tetra- interstitial defects in diamond which may help in their identification.
Author(s): Goss JP, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society