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Stress tensors and dilatation of interstitial defects in diamond

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

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Abstract

The volume change and piezospectroscopic tensors of defects in semiconductors provide a direct link between experiment and modern modeling techniques. We present predictions of these quantities for the single, di-, tri-, and tetra- interstitial defects in diamond which may help in their identification.

Publication metadata

Author(s): Goss JP, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2002

Volume: 65

Issue: 3

Pages: -

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

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