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Alphabet luminescence lines in 4H-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

First-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b(1) line and possesses a weak isotopic shift with C-13 in agreement with observation.

Publication metadata

Author(s): Eberlein TAG, Fall CJ, Jones R, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2002

Volume: 65

Issue: 18

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.65.184108

DOI: 10.1103/PhysRevB.65.184108

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