ePrints

Influence of dislocations on electron energy-loss spectra in gallium nitride

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

We report on first-principles calculations of electron energy-loss (EEL) spectra for bulk group-III nitrides and of spatially resolved EEL spectra for a variety of edge and screw dislocations in GaN. The theoretical bulk low-loss EEL spectra, in the 0-10 eV range, are in good agreement with recent experimental data. We find gap states associated with undecorated full-core dislocations that lead to absorption below the bulk onset energy in low-loss EEL spectroscopy. It is also found that the electrostatic potential at N atoms in the vicinity of an edge dislocation varies by an order of a volt and casts doubt on any simple interpretation of core-loss spectroscopy.

Publication metadata

Author(s): Fall CJ, Jones R, Briddon PR, Blumenau AT, Frauenheim T, Heggie MI

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2002

Volume: 65

Issue: 24

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.65.245304

DOI: 10.1103/PhysRevB.65.245304

Altmetrics

Share