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Lookup NU author(s): Professor Patrick Briddon
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The electrical activity of C-s-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
Author(s): Briddon PR; Andersen O; Peaker AR; Dobaczewski L; Nielsen KB; Hourahine B; Jones R; Oberg S
Publication type: Article
Publication status: Published
Journal: Physical Review B
Year: 2002
Volume: 66
Issue: 23
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
URL: http://dx.doi.org/10.1103/PhysRevB.66.235205
DOI: 10.1103/PhysRevB.66.235205
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