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Lookup NU author(s): Professor Patrick Briddon
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Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.
Author(s): Gutierrez-Sosa A, Bangert U, Fall CJ, Jones R, T Blumenau A, Briddon PR, Frauenheim T
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Microscopy of Semiconducting Materials: Conference on Microscopy of Semiconducting Materials
Year of Conference: 2003
Publisher: Institute of Physics Publishing
Library holdings: Search Newcastle University Library for this item
Series Title: Institute of Physics Conference Series