Browse by author
Lookup NU author(s): Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
SiC bipolar devices show a degradation under forward-biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC using the density functional based codes DFTB and AIMPRO. After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism. (c) 2005 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
Author(s): Blumenau AT, Eberlein TAG, Jones R, Oberg S, Frauenheim T, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Physica Status Solidi. A: Applications and Materials Science. International Workshop on Nitrides Semiconductors (IWN)
Year of Conference: 2005
Pages: 877-882
ISSN: 1862-6300
Publisher: Wiley - VCH Verlag GmbH & Co. KGaA
URL: http://dx.doi.org/10.1002/pssa.200460504
DOI: 10.1002/pssa.200460504
Library holdings: Search Newcastle University Library for this item
ISBN: 18626319
