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Theoretical investigations of the energy levels of defects in germanium

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The donor and acceptor levels of defects in Ge as well as in Si are found using a local density functional method applied to large H-terminated defective clusters. The surfaces of the clusters are modified so that their band gaps are aligned with experimental values. It is shown that the resulting energies of the first donor and acceptor levels are within about 0.2 eV of the experimental values.

Publication metadata

Author(s): Jones R, Carvalho A, Coutinho J, Torres VJB, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Gettering and defect engineering in semiconductor technology XI

Year of Conference: 2005

Pages: 697-702

Publisher: Uetikon-Zuerich

Library holdings: Search Newcastle University Library for this item

ISBN: 9783908451136

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