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Lookup NU author(s): Professor Jon Goss,
Professor Patrick Briddon
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First-principles studies of the divacancy (V-2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions.
Author(s): Briddon PR; Goss JP; Coomer BJ; Resende A; Jones R; Oberg S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 20th International Conference on Defects in Semiconductors (ICDS-20)
Year of Conference: 1999
Library holdings: Search Newcastle University Library for this item
Series Title: Physica B: Condensed Matter