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Lookup NU author(s): Dr Beate Haugk,
Professor Patrick Briddon
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Self-consistent-charge density-functional tight-binding (SCC-DFTB) calculations have been performed to survey the potential-energy surface for a single interstitial carbon atom introduced into GaAs. The results provided a possible model for the diffusion of carbon through GaAs with an activation energy of less than 1 eV. The carbon atom moves via split-interstitial and bond-centered configurations. Subsequently, the energetics of the model reaction were refined using a fully self-consistent density-functional method, AIMPRO. These calculations were found to be in good agreement With the more approximate SCC-DI;TB results. Experimental studies have also found an activation energy of similar to 1 eV for carbon migration in heavily doped material. [S0163-1829(99)02246-8].
Author(s): Latham CD, Haugk M, Jones R, Frauenheim T, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
Print publication date: 01/12/1999
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
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