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Phosphorus-related deep donor in SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Two phosphorus centers in SiC, an isolated P atom substituting for Si (P-Si) and a Si-site P-atom adjacent to a carbon vacancy (P-Si + V-C) are investigated by first principle calculations. It is shown that P-Si + V-C produces a singly occupied donor level which lies deeper than that of P-Si but above the double donor level of Ve. The calculated spin distribution indicates that the P-related paramagnetic resonance signals, P-1,P-2 and P-V, originate from this complex.

Publication metadata

Author(s): Gali A, Deak P, Briddon PR, Devaty RP, Choyke WJ

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2000

Volume: 61

Issue: 19

Pages: 12602-12604

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.61.12602

DOI: 10.1103/PhysRevB.61.12602

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