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Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Lookup NU author(s): Richard Jones, Professor Patrick Briddon

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Abstract

Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

Publication metadata

Author(s): Larsen AN, Goubet JJ, Mejlholm P, Christensen JS, Fanciulli M, Gunnlaugsson HP, Weyer G, Petersen JW, Resende A, Kaukonen M, Jones R, Oberg S, Briddon PR, Svensson BG, Lindstrom JL, Dannefaer S

Publication type: Article

Publication status: Published

Journal: Physical Review B: Condensed Matter and Materials Physics

Year: 2000

Volume: 62

Issue: 7

Pages: 4535-4544

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.62.4535

DOI: 10.1103/PhysRevB.62.4535

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