Toggle Main Menu Toggle Search

Open Access padlockePrints

Carbon-tin defects in silicon

Lookup NU author(s): Professor Patrick Briddon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Infrared absorption experiments and ab initio computer simulations are used to study tin-carbon centers in silicon. Electron irradiation of C and Sn doped Si leads to prominent absorption lines at 873.5 and 1025 cm(-1). These are assigned to a carbon interstitial trapped by a substitutional Sn atom. The calculated modes are in good agreement with those observed. The calculations also suggest that a close-by pair of substitutional C and Sn will be a stable but electrically inert defect. This defect may account for the experimentally observed drop in the concentration of the C-s-C-i defect after a room temperature annealing. Finally, we suggest Sn-C codoping of Si for manufacturing of radiation hard silicon.

Publication metadata

Author(s): Lavrov EV, Fanciulli M, Kaukonen M, Jones R, Briddon PR

Publication type: Article

Publication status: Published


Year: 2001

Volume: 6412

Issue: 12

Pages: 125212(1-5)

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: The American Physical Society


DOI: 10.1103/PhysRevB.64.125212


Altmetrics provided by Altmetric