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Characterization of ideal and disordered InAS/GaSb heterostructures for infrared technologies

Lookup NU author(s): Dr Matthew Kitchin, Dr Michael Shaw, Professor Milan Jaros

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Abstract

A series of microscopic calculations have been performed for a family of type II InAs/GaSb multiple quantum well (MQW) heterostructures. The resulting stationary state solutions were used to investigate the infrared spectra and scattering cross-sections due to clusters of isovalent anion defects. The absorption coefficient exhibited a polarization dependence which has not previously been observed for heterostructures made from these materials, in that the spectral features and magnitudes matched closely for radiation polarized parallel and perpendicular to the interfacial planes. The magnitude of the scattering cross-section was generally consistent with the defect density and the localization of the carrier wave functions. However, exceptions from this trend were identified in the proximity of the interfaces for electron scattering. Lattice relaxation around defects was observed to reduce scattering for both holes and electrons although the changes in the cross-section due to this phenomenon were not as pronounced as for equivalent superlattice systems. The collective results highlight significant differences between the optical and dynamical properties of MQW and superlattice systems. (C) 2002 Elsevier Science Ltd. All rights reserved.

Publication metadata

Author(s): Shaw MJ; Jaros M; Kitchin MR; Hosseini SA

Publication type: Article

Publication status: Published

Journal: Microelectronics Journal

Year: 2002

Volume: 33

Issue: 11

Pages: 935-943

ISSN (print): 0959-8324

ISSN (electronic):

Publisher: Elsevier Ltd

URL: http://dx.doi.org/10.1016/S0026-2692(02)00101-5

DOI: 10.1016/S0026-2692(02)00101-5

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