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Lookup NU author(s): Mr MA Hussan Hassan,
Dr Alun Harris,
Emeritus Professor James Burdess
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A simple one-step inductively coupled plasma etching technique has been developed for the fabrication of SiC resonant beam structures. Straight cantilever and bridge devices have been made successfully. The structures have been actuated and resonant frequencies ranging from similar to 120 kHz to similar to 5 MHz have been measured. Comparison of the theoretically simulated and experimentally measured resonant frequencies shows the presence of significant tensile stress in bridge structures while the cantilever beams are free of stress. The degree of the tension in the bridge structures has been found to be independent of the bridge length. (C) 2003 American Vacuum Society.
Author(s): Jiang LD, Cheung R, Hassan M, Harris AJ, Burdess JS, Zoman CA, Mehregany M
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Journal of Vacuum Science and Technology B: 47th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN)
Year of Conference: 2003
Publisher: American Institute of Physics
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