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Lookup NU author(s): Professor Patrick Briddon
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Local density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to V-Si-H. We find that the electronic structure of this defect and the character of its vibrational modes are inconsistent with this assignment. In contrast, a H-2(*) center, bound to a carbon anti-site, is more stable than the isolated molecule and possesses a donor level close to that observed for the H-lines. Moreover, its vibrational modes are in good agreement with experiment. A possible mechanism for the radiation enhanced quenching of the defect is discussed.
Author(s): Prezzi D, Eberlein TAG, Jones R, Hourahine B, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
Notes: Article no. 205207
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