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Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide

Lookup NU author(s): Professor Nick Wright

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Abstract

New results are presented concerning several optical centres having local vibrational modes in electron it-radiated and annealed 4H and 6H SiC. Some of these centres are common to both polytypes, others have only been found in 6H SiC. They appear, typically, after annealing in the range 1000° C - 1300° C. Additional results have been obtained about mode splitting from C-13 isotope enriched 6H SiC.

Publication metadata

Author(s): Steeds JW, Furkert SA, Sullivan W, Hayes JM, Wright NG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2005

Pages: 347-350

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd.

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 0878499636

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