ePrints

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator

Lookup NU author(s): Professor Nick Cowern

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Hamilton JJ, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Bennett NS, Cowern NEB, Kirkby KJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Ion Implantation Technology Conference

Year of Conference: 2006

Share